China Material Technology Co., Ltd.
China Material Technology Co., Ltd.
🇨🇳 China, Jiangxi
2014101-200 peopleManufacturer/Trading CompanyChina Material Technology Co., Ltd. (MAT-CN) is a high-tech manufacturer and trading company based in Nanchang, China, specializing in advanced materials and sputtering targets. Established in 2014, the company employs between 101 and 200 people and has an annual revenue of US$1 Million to US$2.5 Million. MAT-CN is a professional manufacturer engaged in the research, development, production, and sale of sputtering targets, evaporation materials, substrate wafers, semiconductors, highly pure materials, rare earth materials, and inorganic chemical compounds. They offer a wide range of specialist metals, alloys, and inorganic chemical compounds. The company utilizes advanced fabrication methods including Vacuum Induction Melting (VIM), Vacuum Sintering, Vacuum Melting Casting, Vacuum Arc Melting, Hot Pressing (HP), Cold Isostatic Pressing (CIP), cold pressing and sinter, FZ, CZ, CVD, and vacuum forging. MAT-CN holds ISO 9001 certification, ensuring strict quality control throughout raw material selection, production, and finished product testing. They provide custom design and production services through their experienced R&D team and supply products in various forms such as plates, disks, wires, rods, sheets, foils, circles, tubes, and more to industrial fields and laboratories worldwide.
OEM manufacturerOffers OEM services for customized brand manufacturing.
Product customizationOffers full customization for design and features.
High-tech enterpriseRecognized as a high-tech or innovative enterprise.
Low MOQOffers low minimum order quantity options.
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High Purity Sputtering Target ---- Azo Target
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High Purity Sputtering Target ---- Azo Target, Find Details and Price about Sputtering Target Zno Targert from High Purity Sputtering Target ---- Azo Target - China Material Technology Co., Ltd$50Customers
MUNDIPHARMA
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ISO 90011
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Key customer
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Key market
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Description
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![Semiconductor Precursor, Tetrakis (diethylamino) Hafnium, Tdeah, CAS 19824-55-6, Hf[N (CH2CH3) 2]4, 6n](https://file-access.sourceready.com/supplier/assets/cta2b5op7jrc73e8dt3g.jpg/high)
Semiconductor Precursor, Tetrakis (diethylamino) Hafnium, Tdeah, CAS 19824-55-6, Hf[N (CH2CH3) 2]4, 6n
![Semiconductor Precursor, Tetrakis (dimethylamino) Hafnium, Tdmah, CAS 19782-68-4, Hf[N (CH3) 2]4](https://file-access.sourceready.com/supplier/assets/cta2b5gp7jrc73e8dt10.jpg/high)
Semiconductor Precursor, Tetrakis (dimethylamino) Hafnium, Tdmah, CAS 19782-68-4, Hf[N (CH3) 2]4
Semiconductor Precursor, Bis (ethylcyclopentadienyl) Ruthenium, Ru (CpEt) 2, CAS 32992-96-4
Semiconductor Precursor, Dicarbonyl Cyclopentadienyl Cobalt, Cpco (CO) 2, CAS 12078-25-0, 6n
Semiconductor Precursor, (3, 3-Dimethyl-1-butyne) Dicobalt Hexacarbonyl, Cctba, CAS 56792-69-9, 6n
Catalyst, Dicobalt Carbonyl, CO2 (CO) 8, CAS 10210-68-1, 98%
Catalyst, Semiconductor, Triruthenium Dodecacarbonyl, Ru3 (CO) 12, 15243-33-1
Catalyst, Chromium Hexacarbonyl, Cr (CO) 6, CAS 13007-92-6, 99%
Catalyst, Molybdenum Hexacarbonyl, Mo (CO) 6, CAS 13939-06-5, 99%
Catalyst, Tungsten Hexacarbonyl, W (CO) 6, CAS 14040-11-0, 99%
